RTP Series

Laboratory ovens for rapid thermal processing and rapid thermal annealing

With its RTP series, UniTemp provides process equipment specifically designed for RTP/RTA applications. The laboratory furnaces are available in various models and configurations and are customized to meet specific requirements. They are ideal for research and development or for cost-effective, high-throughput production. The units can also be integrated into existing production lines.

RTP devices are designed for a variety of semiconductor applications. They can be used, for example, to process wafers with a diameter of up to 200 mm or substrates measuring up to 156 x 156 mm. Depending on the model and configuration, temperatures of up to 1500 °C are achieved using precisely controlled and rapid heating rates (up to 200 K/s). Significant cooling rates—depending on temperature and load—ensure an accelerated process without compromising quality. The touch panel and the SIMATIC® controller guarantee simple and convenient operation directly on the device.

  • Precise, fast heating and cooling rates
  • Absolute temperature uniformity
  • Up to 4 gas lines (mass flow controllers/MFCs)
  • Integrated data logging
  • Heating via infrared lamps
  • SIMATIC® control system
  • Compact footprint
  • Remote control available
  • RTP (Rapid Thermal Processing)
  • RTA (Rapid Thermal Annealing)
  • RTO (Rapid Thermal Oxidation)
  • RTN (Rapid Thermal Nitridation)
  • Operation with inert gases, oxygen, hydrogen, and forming gas
  • SiAu, SiAl, and SiMo alloys
  • Low-k dielectrics
  • Crystallization & densification
  • Si solar cells on glass

RTP Series in comparison

Vacuum up to 1x10-3 hPa RTP-100 RTP-150 RTP-200 VPO-300
max. Wafer size 100 mm dia or 150 mm dia or 200 mm dia or 300 mm dia or
Graphite susceptor (i.d.) 106 x 106 x 1.75 mm³ 157 x 157 x 2 mm³ 206 x 206 x 1 mm³ 300 x 300 x 3 mm³
Graphite crucible (i.d.) Dia 90 mm x 8 mm 134 x 134 x 11 mm³ 201 x 201 x 7 mm³ N/A
max. Temperature 1000 °C (opt. 1200 °C or 1500 °C) 1000 °C (opt. 1200 °C) 1000 °C (opt. 1200 °C) 1000 °C (opt. 1200 °C)
Max. ramp up rate * 150 K/sec (200 K/sec) 75 K/sec (150 K/sec) 50 K/sec (100 K/sec) 40 K/sec
Max. cool Down rate
(1000 °C > 400 °C)		 up to 200 K/min up to 200 K/min up to 200 K/min up to 200 K/min
Heating power 20 kW 21 kW 21 kW 36 kW
Top and bottom heating (selectable) Check Check Check Check
Zone Control Check Check Check Check
Process Gas lines MFC (max. 4 pcs). MFC (max. 4 pcs). MFC (max. 4 pcs). MFC (max. 4 pcs).

* Applied to a single wafer

Available options

Options RTP-100 RTP-150 RTP-200 VPO-300
Ramp up rate (max.) -EP 200 K/sec (27 kW) 150 K/sec (42 kW) 100 K/sec (42 kW) -
Temperature extension -HT 1200°C 1200°C 1200°C 1200°C
Temperature extension -EP-XHT 1500 °C (27 kW) 80K/sec ramp up rate on Sic coated susceptor
Extended holding time -TX Check Check Check Check
Extended holding time plus max. temp. -TX-HT Check Check Check -
Oxygen analyser -Ox I Check Check Check Check
Signal Tower -PT Check Check Check Check
Quartz glass trays (various) -QT Check Check Check Check
Graphite Suszeptor (various) -GS Check Check Check Check
Pumps / Water Cooler /UHE Check Check Check Check
Higher chamber -EH - - - 120mm
Extended opening height -ExOH - - - 300mm

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